the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. silicon transistor 2sc1623a npn silicon epitaxial transistor mini mold data sheet document no. d17841ej2v0ds00 (2nd edition) date published november 2005 ns cp(k) printed in japan c 2005 the mark shows major revised points. the revised points can be easily searched by copying an "" in the pdf file and specifying it in the "find what:" field. features ? high dc current gain: h fe = 200 typ. (v ce = 6.0 v, i c = 1.0 ma) ? high voltage: v ceo = 50 v absolute maximum ratings (t a = 25 c) collector to base voltage v cbo 60 v collector to emitter voltage v ceo 50 v emitter to base voltage v ebo 5.0 v collector current (dc) i c 100 ma total power dissipation p t 200 mw junction temperature t j 150 c storage temperature range t stg ? 55 to +150 c electrical characteristics (t a = 25 c) characteristic symbol min. typ. max. unit test conditions collector cut-off current i cbo 0.1 a v cb = 60 v, i e = 0 a emitter cut-off current i ebo 0.1 a v eb = 5.0 v, i c = 0 a dc current gain h fe 90 200 600 v ce = 6.0 v, i c = 1.0 ma note collector saturation voltage v ce(sat) 0.15 0.3 v i c = 100 ma, i b = 10 ma note base to saturation voltage v be(sat) 0.86 1.0 v i c = 100 ma, i b = 10 ma note base to emitter voltage v be 0.55 0.62 0.65 v v ce = 6.0 v, i c = 1.0 ma note gain bandwidth product f t 250 mhz v ce = 6.0 v, i e = ? 10 ma output capacitance c ob 3.0 pf v cb = 6.0 v, i e = 0 a, f = 1.0 mhz note pulsed: pw 350 s, duty cycle 2% h fe classification marking l4 l5 l6 l7 h fe 90 to 180 135 to 270 200 to 400 300 to 600 package drawing (unit: mm) 1: emitter 2: base 3: collector
data sheet d17841ej2v0ds 2 2sc1623a typical characteristics (t a = 25c) free air 200 180 160 140 120 100 80 60 40 20 0 ?20 0 20 40 60 80 100 120 140 160 180 t a - ambient temperature - ?c p t - total power dissipation - mw total power dissipation vs. ambient temperature 100 80 60 40 20 0 i c - collector current - ma v ce - collector to emitter voltage - v collector current vs. collector to emitter voltage 0 0.4 0.8 1.2 1.6 2.0 1.0 0.9 0.8 0.7 0.3 0.2 i b = 0.1 ma 0.6 0.5 0.4 45 40 30 20 25 15 10 10 8 6 4 2 0 0 1020304050 0 i c - collector current - ma v ce - collector to emitter voltage - v collector current vs. collector to emitter voltage h fe - dc current gain i c - collector current - ma dc current gain vs. collector current h fe - dc current gain i c - collector current - ma dc current gain vs. collector current v ce = 6.0 v pulsed ?25?c 25?c t a = 75?c 0 i b = 5.0 a 35 v ce = 6.0 v 1.0 v 0.5 v 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1000 500 300 100 50 30 10 5 3 0.1 1000 500 300 100 50 30 10 5 3
data sheet d17841ej2v0ds 3 2sc1623a v ce = 6.0 v pulsed 100 50 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v be - base to emitter voltage - v collector current vs. base to emitter voltage i c - collector current - ma t a = 75?c 25?c ?25?c 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 2 v 10000 2000 5000 1000 200 500 100 20 50 10 ?0.1 ?0.2 ?0.5 ?1 ?2 ?5 ?10 ?20 ?50 ?100 f t - gain bandwidth product - mhz i e - emitter current - ma gain bandwidth product vs. emitter current 20 10 20 10 0.1 0.2 1 0.5 2 5 10 20 50 100 i c - collector current - ma collector and base saturation voltage vs. collector current v be(sat) - base saturation voltage - v v ce(cat) - collector saturation voltage - v v cb - collector to base voltage - v v eb - emittor to base voltage - v input and output capacitance vs. reverse voltage c ib - input capacitance - pf c ob - output capacitance - pf f = 1.0 mhz c ib (i c = 0 a) c ob (i e = 0 a) 100 20 50 10 2 5 1 0.2 0.5 0.1 0.1 0.2 0.5 1 2 5 10 20 50 100 1000 800 600 400 200 0 h fe - small signal current gain h fe - dc current gain small signal current gain vs. dc current gain 0 200 400 600 800 1000 v ce = 6.0 v i c = 1.0 ma f = 1.0 khz h ie - input impedance - k h fe - small signal current gain input impedance voltage feedback ratio and output admittance vs. small signal current gain 50 40 30 20 10 0 200 400 600 800 1000 v ce = 6.0 v i c = 1.0 ma f = 1.0 khz h re - voltage feedback ratio - 10 ?4 50 40 30 20 10 0 h oe - output admittance - s 100 80 60 40 20 0 h oe h re h ie v be(sat) v ce(sat) pulsed i c = 50 ? i b i c = 50 ? i b v ce =10 v 6 v 1 v
data sheet d17841ej2v0ds 4 2sc1623a i c - collector current - ma normalized h-parameter vs. collector current h e - normalized h - parameter h ie h re h fe h oe h ie h re h fe h oe v ce = 6.0 v f = 1.0 khz h e (i c ) h e (i c = 1.0 ma) h e = 10 2 5 1 0.2 0.5 0.1 0.1 0.2 0.5 1 2 5 10 i ce = 1.0 v f = 1.0 khz h e (v ce ) h e (v ce = 6 v) h e = 3 2 1 0 v ce - collector to emitter voltage - v normalized h-parameter vs. collector to emitter voltage h e - normalized h - parameter 10 20 30 h oe h re h fe h ie h fe h ie h re h oe
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